A Compact Analytical Model of Double Gate Tunnel-FETs AlGaSb/InAs Heterojunction Structure

This Paper puts forward a compact analysis of Double Gate (DG) AlGaSb/InAs based Tunnel Field Effect Transistor (TFET) for simply modeling its drain current. A 2-D Poisson’s equation is solved to obtain the surface potential considering the boundary conditions. Then the drain current is derived based on the Kane’s model. The model also reflects the impacts of gate biasing, oxide thickness as well as doping concentration on the surface potential and current-voltage characteristics. In the results of the proposed model a remarkable improvement is noticed in the on-current of the DGTFET. Good agreement has revealed by several numerical simulations between AlGaSb/InAs single-gate (SG) and double-gate TFETs structure.