Design and Simulation of 22nm FinFET Structure Using TCAD

The FINFET concept is reviewed for the enhancement of power and performance in the VLSI Optimizing circuit .FINFET is the basics for upcoming technologies because of its power utilization, performance, scalability and better control in the short channel effects. In this paper the working of FINFET is analyzed using Hfo₂ dielectric material by using TCAD tool. Drain current in the circuits are optimized by using high K dielectric material Hf0_2. The result shows that the improvement in the device performance by using various gate work function (4.2ev to 4.6ev). Better device Structure will surely be the solution for high optimizing devices.