Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K

We target the device parameter analysis and drain current modelling for amorphous indium gallium zinc oxide (IGZO) thin film transistors from 210 to 370K. We study and discuss the temperature behaviour of physical IGZO TFT parameters from low to high temperatures. We demonstrated and explained that in IGZO TFTs, the characteristic temperature of the density of states (DOS) increases, with increasing temperature. Finally, using the extracted parameters, we validate our IGZO TFT drain current model at temperatures from 190K up to 370K.