Demonstration of 4H-SiC Thyristor Triggered by 100-mW/cm2 UV Light

In this letter, a silicon carbide (SiC) thyristor, with an 80-
$\mu \text{m}$
thick p-type blocking base, is fabricated and triggered by a 365-nm ultraviolet light-emitting diode (UV LED). In the fabricated thyristor, a thin double-layer n-base structure is designed to improve the poor hole-injection capacity of p
⁺
n emitter junction and reduce the triggering ultraviolet light intensity. The UV-LED-triggered performance of the fabricated light-triggered SiC thyristor (LTT) is tested by a resistive load circuit. The results indicate that the fabricated SiC LTT can be triggered by a UV LED with an intensity of 100 mW/cm
²
. Also, it is shown that the turn-on delay time (
${t}_{\text {d}}$
) has the highest proportion in the turn-on time (
${t}_{\text {on}}$
) and affects the turn-on performance of the SiC LTT most significantly.