Fast-switching symmetric self-electrooptic-effect device at 865 nm

Summary form only given.Although the symmetric self-electrooptic-effect device (S-SEED) may not be as fast as recent all-optical switches, it retains the advantages of low-power consumption, low latency, cascadeability, and wafer-scale fabrication. We have fabricated 865-nm S-SEED devices designed for fast switching speed. The key elements are extremely shallow quantum wells, low spreading-resistance layers, and low-resistance ohmic contacts. We observed a rapid switching transition (6 ps) with about 20% ringing.