Oxidation enhanced optical response on gallium nitride

Summary form only given.The wide bandgap III-V nitrides have been long recognized as a material system of outstanding opto-electronic properties compared with those of group IV and II-VI materials. Although much attention has been emphasized on the device application, little has been devoted to the issues of surface passivation on GaN. We report a UV-enhanced, reaction-rate limited wet oxidation process on GaN at room temperature. A high peak oxidation rate can be achieved.