Design Optimization of Dual Material Gate Nano Sheet Field Effect Transistors

Recently, nano-sheet transistors are getting much attention as to overcome the limitation of current FinFET technology. To further enhance the performance of nano-sheet transistors, we propose a new device that consists of a metal gate material with two different work functions. In this way, we can reduce the electric field change on the drain side and make the device with better short channel effect resistance. In addition, we present a work function combination that provides the most optimal device characteristics improvement when using two materials.