A 28GHz CMOS Differential Bi-Directional Amplifier for 5G NR

A 28GHz differential bi-directional amplifier in a standard 65nm CMOS process is presented. This work is realized based on the neutralized bi-directional core together with the fully shared inter-stage matching networks. The core chip area is only 0.11mm
²
. At 28GHz, a 15.1-dBm saturation output power and a 4.2-dB noise Figure are realized for PA mode and LNA mode, respectively. The DC power consumptions for PA mode and LNA mode are 149mW and 31mW, respectively, under 1-V DC supply.