Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices

This paper presents short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices using a compact model derived from a quasi-2D approach and MEDICI 2D simulation. Based on the analytical model, as verified by the 2D simulation results, the DTMOS device has less short channel effects including drain-induced-barrier-lowering (DIBL)-induced short channel effects.