Pseudo-MOSFET response to transient ramp signal applied to the gate

The pseudo-MOSFET configuration was widely used for material characterization and lately for biochemical sensors applications. For both cases, current versus gate voltage measurements are mostly done in “static” conditions (sweep mode). This work aims to settle the physics mechanisms of the pseudo-MOSFET transistor occurring when moving from quasi-static current versus gate voltage to real transient measurement conditions.