Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs

Near zero-field magnetoresistance (NZFMR) spectroscopy has the potential to provide chemical and physical information on radiation damage in 3-D integrated circuits. Electrically detected magnetic resonance (EDMR) has provided chemical and physical information for several decades but is limited in applicability due to the need for an RF electromagnetic field. We model NZFMR and EDMR in Si/SiO
₂
metal-oxide-semiconductor field-effect transistors (MOSFETs) by including spin-dependent recombination and hyperfine interactions in stochastic Liouville equations. We find that to accurately describe both NZFMR and EDMR, both the defect spin and conduction spin has to interact with a bath of nuclear spins, which are assumed to be composed of combinations of
²⁹
Si and hydrogen.