A High-Gain Continuous Class- F Power Amplifier in 90-nm CMOS for 5G Communication

A continuous class-F power amplifier (PA) is proposed using 90-nm CMOS process. The efficiency of the two-stage PA is enhanced by the proposed continuous class-F output matching network, which controls the reactive movement of the fundamental and 2^nd harmonic impedances to achieve impedance condition of continuous class F. Besides, the gate bias of driver stage is designed for the reverse AM-PM distortion to compensate the of AM-PM distortion of the power stage. The PA achieves a measured small-signal gain of 26 dB, saturation output power (Psat) of 15.5 dBm, peak power-added efficiency (PAE) of 32%, output I-dB compression power (OP1dB) of 13.7 dBm at 27 GHz, respectively. The digital-modulation measurement for 64-QAM signal with bandwidth of 250 MHz achieves average output power (Po,avg) 9.5 dBm when the EVM is −25 dB.