Variability Effects in Nanowire and Macaroni MOSFETs—Part II: Random Telegraph Noise

In this article and in its Part I, we investigate variability effects on the threshold voltage of nanowire (NW) and Macaroni devices, focusing on random dopant fluctuations and random telegraph noise (RTN) and assessing their dependencies on device radius, channel length, and doping. In this article, we address variability induced by RTN, showing that the slope of the exponential distribution follows different dependencies with respect to planar devices. We highlight the strong sensitivity of the Macaroni devices to traps at the filler-oxide interface, discussing the dependence. Finally, accumulation-mode devices are addressed, showing that they allow to achieve a lower RTN in NWs but a worse one in the Macaroni devices.