Thermal resistance analysis for a high power 3D integrated RF Module based on TSV interposer

This paper proposed a three-dimensional integrated RF transceiver module based on high resistivity Si interposer embedded with microchannel for on-site heat dissipation. It's composed of three stacked layers of TSV interposer, including the bottom one embedded with microchannels for on-site cooling which has four high power chips assembled on its top side, the middle one having four large cavities to accommodate the chips assembled on the bottom one which is utilized as a supporting layer, the top one having a IC driver chip mounted on its top side. In order to study its thermal property, a simplified thermal resistance network is built and analysis is done. To validate this method, finite element simulation is conducted and the results show that maximum deviation of the temperature rise of each high power chip mounted on the bottom Si interposer referring to coolant is 9.04% and minimum deviation is 4.85% in the range from 0.1m/s to 1m/s for DI coolant.