Validation of an analytical large signal model for AlGaN/GaN HEMT's on SiC substrates

An analytical nonlinear model describing AlGaN/GaN HEMT's grown on SiC substrates has been extracted based on measured device data. The model accounts for dispersion in transconductance and output conductance present in the devices. Model validations based on comparisons with 16 GHz power sweep data show good agreement between the model predictions of a 3.3 W/mm power density (18% PAE) and the measurements for these devices.