Characterization of Wideband Gain RF Amplifier for L-Band Frequency Application

In recent years, the increase of demand for low-cost and multi-standard radio frequency (RF) devices has grown up significantly. Sometimes the RF devices require unique properties which are implementable for specific frequency application. In this paper, characterization of wideband gain RF amplifier for L-band frequency application is presented. The characterization is performed through simulation and then validated with experimental measurement. The proposed RF amplifier is driven by a single active component of HMC636ST89 which is typically applicable for L-band and S-band applications. Several attempts are conducted intensively through simulation to optimize the proposed RF amplifier in providing wideband gain amplification. The characterization result demonstrates the capability of RF amplifier to have gain more than 12 dB in the frequency range from 1.5 GHz to 3 GHz with the values of
$\mathrm{VSWR}_{\mathrm{IN}}$
and
$\mathrm{VSWR}_{\mathrm{OUT}}$
less than 2. The experimentation is then carried out to characterize the properties of realized RF amplifier verifying the agreement between simulation and measurement.