Performance Analysis of High- $k$ Dielectric Based Double-gate Carbon Nanotube MOSFET

The Carbon Nano Tube Metal Oxide Semiconductor Field Effect Transistors (CNT-MOSFETs) have been invented as one of the sustainable transistor even when the device dimensions are in the nano-scales. The CNTs are capable for realizing high mobility in the channel. The CNT-MOSFETs utilize carbon nanotubes as channel of the device and maintain high electrical performance along with mitigation to the short channel effects. Because of their superior electronic properties, they are becoming popular consistently. In this research work, authors have designed and analyzed the electrical behavior of carbon nanotube transport and report the effects of variation of dielectric materials as SiO₂, Al₂O₃, Ta₂O₅, and HfO₂ on the electrical performance of double-gate structure CNT-MOSFET. The performance of the designed device have been compared with the electrical characteristics obtained using different high-k gate dielectric materials. The comparison at different gate insulator gives an adequate explanation for current transport behavior in the transistor and demonstrates the improvement in ballistic CNT-MOSFET.