Double-gate Tri-active Layer Channel Amorphous-IGZO Thin Film Transistor for AMLCD Pixel Circuit

Active Matrix Liquid Crystal Displays (AMLCDs) of high resolution such as Ultra-HD (7680×4320 pixels), density (more than 300 ppi), and refresh rate (higher than 240 Hz) are in latest trend. Amorphous-Indium Gallium Zinc Oxide Transistor (α-IGZO TFTs) has proven its prominence as switching element in pixel driving circuits of displays, to encompass those trends, improved high speed α-IGZO TFTs are required. Improved electrical characteristics have been obtained by single and double gate Tri-active layer (TAL) channel α-IGZO TFTs. In this present research work, authors have analyzed the performance of DG-TAL α-IGZO TFT which has three multi-stack layer (IGZO/ITO/ITO1) as channel and two gates. The proposed novel DG- TAL Thin Film Transistor and analysis of transfer characteristics have displayed enhanced electrical output parameters such as high capacitance (CDI) 26.2 nF/cm², high mobility (μFE) 16.93 cm²/V·s and steeper subthreshold swing (SS) 95 m V/decade. The superior electrical behavior of the device is promising for its application AMLCD pixel circuit.