A Small-Signal Model Extraction and Optimization Method for AlGaN/GaN HEMT Up to 110 GHz

this paper proposed a small-signal compact model for AlGaN/GaN HEMT up to 110 GHz. In this equivalent circuit the manifold parts of gate and drain are considered to improve the model accuracy at mm-wave frequency. As some extrinsic parameters can't be extracted directly from measurement data in this equivalent circuit, some empirical equations are shown here to generate the initial values. After that an optimization method is used here to decrease the errors between simulation and measurement, the optimization procedure are also shown here. The intrinsic parameters are optimized with the same method. Finally the 0.1 μmAlGaN/GaN HEMT transistors with the gate-width 4x30 μm and 4x50 μm are used to verify the model. Compared with results of other papers, the model errors show in this paper are quite small.