Parasitic Parameters Extraction for PD SOI MOSFETs Using Four-Port Network

In this work, four-port network structure was used into small signal parameters extraction for radio frequency (RF) metal-oxide-semiconductor field-effect transistors (MOSFETs) in partially depleted (PD) silicon-on-insulator (SOI) technology. Small signal scanting parameters (S-parameters) for N-type T-gate (TB) MOSFETs were measured from 0.1 GHz to 30.1 GHz through GSGSG probes. A simple model topology of four-port network was analyzed and small signal parasitic resistance and capacitance are extracted from conductance parameters and impedance parameters converted from S-parameters.