GaN HEMT Based Doherty Power Amplifier with Network Matching Optimization Technique for 2.4GHz

In this paper, different technologies for Doherty techniques are compared. GaN HEMT technology has been used for achieving high gain, efficiency, and power. Power amplifiers are very important and usually found at the transmitter section. There is an increase in demand for achieving high gain and high PAE for the power amplifiers. To meet such requirement in the market, there must be a new technology for designing such good power amplifiers. GaN HEMT has many advantages and this technology can overcome the disadvantages of CMOS technology. This paper will compare and give the best analysis for the Doherty technique. The GaN HEMT DPA design gives PAE greater than CMOS technology, gain of 10dB and power greater than 40dBm at 2.4GHz.