Tight binding analysis for quantum-wire lasers and quantum-wire infrared detectors

The tight binding method is applied to the analysis of the energy band structure of GaAs-AlGaAs quantum-wire lasers and infrared detectors. The authors clarify the differences between the device characteristics based on the conventional Kronig-Penney model and those based on the tight binding method. The results show the importance of considering the band structure carefully when predicting the device characteristics. The tight binding method for the quantum wire is described. The gain and the differential gain characteristics, which are important parameters for the lasing characteristics are discussed using the band structures calculated by the tight binding method. The absorption spectral properties of the quantum-wire infrared detector are discussed.<>