Impact of Total Ionization Doze on Substrate biased Symmetric Lateral Bipolar Transistor on SiGe-OI

Impact of Total Ionization Doze (TID) on substrate biased Symmetric Lateral Bipolar Transistor (SLBT) on SiGe-OI is studied. With the introduction of substrate bias the performances of the device is enhanced. This paper highlights the other side of substrate biasing when subject to TID impact by using 2D simulation study of SLBT on SiGe-OI. We observe that breakdown voltage (BVCEO) is reduced with TID impact and is further reduced when substrate bias is applied to the device. A No substrate biased device is observed to exhibit higher BVCEO even after exposure to TID of 1×10¹¹cm^-2 when compared to BVCEO of +1V substrate biased device before exposure to radiation.