Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

We have demonstrated heterogeneous integration of a distributed feedback laser diode (LD) and high-efficiency InGaAsP Mach-Zehnder modulator (MZM) on Si waveguide circuits. Epitaxial regrowth on directly bonded III-V layer is a key to integrate III-V active materials with different bandgaps on Si. The integrated device shows a LD threshold current of 4.5 mA with a 500-μm active length, V
_π
L of 0.4 Vcm with a 500-μm long phase shifter, and fiber coupled output power of 2.9 mW with an LD current of 70 mA. The device also shows an eye opening at 28 Gbit/s with 4.2 V
_pp
.