Non-ebeam AlGaN/GaN HEMTs with $f_{\max}$ of 206 GHz for Mass Production

We report 100-nm gate AlGaN/GaN high electron mobility transistors (HEMTs) without electron-beam (e-beam) lithography featuring current gain cut-off frequency ($f_{\mathrm{T}}$) and maximum oscillation frequency ($f_{\max}$) of 66 GHz and 206 GHz, respectively. Fabricated in commercial fab, the gate width of ∼80 nm using i-line stepper and sidewall technology on 6-inch wafer indicates the possibility application in rapid mass production compared to slow and expensive e-beam method.