Scalable AgilentHBT model for GaAs HBTs

In this paper, a scalable large-signal AgilentHBT (AHBT) model for GaAs HBTs is presented. The model parameters can be scaled to describe devices of different physical dimension by using simple empirical equations, with all the variables in which being extracted directly from the measured data of various dimension. The correctness of the scalable model is further verified by four devices of different widths with good fitting between measured and simulated results on DC, CV, Ft and S parameters over the frequency range over 0.1-20 GHz. The good agreement offers a much wider range of options for optimizing high-speed circuits.