High Gain and Wideband CMOS Active Balun LNA in 0.18μm Technology for Ka-Band Applications

A wideband, fully differential cascode low-noise amplifier integrated with active balun is presented for Ka-Band applications. A common source (CS)-common gate (CG) noise cancelling active balun is employed to convert the single-ended signal from the antenna to differential signal. The proposed balun LNA is designed with a center frequency of 30GHz in 0.18μm standard RF CMOS technology. The proposed topology achieves a differential power gain of 29.897 dB with a 3 dB bandwidth and noise figure (NF) of 6.04GHz and 3.1dB respectively. The reverse isolation is better than-62.29 dB over the entire bandwidth. The simulated LNA draws a current of 9.75 mA while consuming 17.55 mW from 1.8 V supply voltage.