A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance

A GaSb/ln
_0.4
Ga
_0.6
As heterojunction Z-Shaped TFET is proposed and investigated by a TCAD simulation tool. A low subthreshold swing (16.2 mV/dec) is obtained. A large on- state current, I
_on
(748μA/μm) and a large on-and off-state current ratio, I
_on
/I
_off
(7.48×10
⁹
) are achieved for the device under a drain bias of 0.5 V. In addition, the temperature dependence of the proposed device is presented, and it shows that low temperatures favor for I
_on
/I
_off
. It is also revealed that the on-state current can be enhanced by adjusting the device geometry. Moreover, the device can work at a low supply voltage (~0.2 V).