Microwave Heating Study of Dielectric Material Placed at the Injection Port of an E-Plane Bend

Microwave heating of dielectric window material placed at the injection port of an E-Plane Bend is investigated in this study. 2.45 GHz microwave power is injected into a matched load through a microwave injection hardware consisting of one WR340 rectangular waveguide section and an E-plane waveguide bend. A 3-stub tuning arrangement is used to obtain a matched condition. Teflon is considered here as the dielectric window material, placed between WR340 waveguide section and E-plane bend. This study is essentially needed to know peak temperature of the dielectric material (Teflon) at various microwave power of 500W, 750W and 1kW. The objective of the work is to investigate the temperature rise in Teflon along with microwave injection hardware over predetermined time periods. The steady-state temperature analysis has also been carried out to stimulate the knowledge about the temperature variation in Teflon window, affecting loss tangent, at aforementioned power levels.