Role of High-K Dielectric on Threshold Voltage Shift for Low-High Doping Profile in Short-Channel MOSFET

Threshold voltage shift on negative scale is obtained in short-channel MOSFET with low-high doping profile considering HfO₂, Al₂O₃ and SiO₂ as dielectric materials. Considering implant depth less than depletion depth along with lower concentration, Poisson's equation is solved subject to inversion condition where theoretical findings are compared with that obtained by ideal sheet charge approximation. Structural and doping parameters are altered within practical range, and corresponding voltage shift is measured. Both implant depth and depletion width are measured with substrate concentration variation. Results reveal that the enhancement MOSFET can be used for deletion mode of operation.