Circuit Analysis of Pass Transistors and Inverter based on Negative Capacitance Silicon-Germanium Double Gate FET (NCSiGeDGFET)

This work presents the performance of Negative Capacitance Silicon-Germanium Double Gate FET (NCSiGeDGFET) based pass transistors and inverter. The ferroelectric layer has been introduced to reduce the power dissipation while SiGe has been incorporated to improve the current drivability. The static and transient characteristics of NCpMOS-Pass Transistor (NCpMOS-PT), NCnMOS-Pass Transistor (NCnMOS-PT), and NCCMOS inverter have been obtained by solving Landau-Khalatnikov equation with TCAD 2D electrostatic. It has been shown that NCpMOS-PT, NCnMOS-PT, and NCCMOS exhibit superior performance in terms of steeper characteristics and reduced static and switching power dissipation as compared to conventional pass transistors and inverter.