Computational Study of p-n Carbon Nanotube Tunnel Field-Effect Transistor

In this article, a new gate-all-around (GAA) p-n carbon nanotube TFET (CNT-TFET) is proposed and compared with its conventional counterpart. The nonequilibrium Green's function (NEGF) formalism is used to perform the quantum simulations, where the ballistic transport is assumed. The quantum simulation study includes the transfer characteristics, subthreshold slope, ON-OFF current ratio, switching speed, and power-delay product. The simulations show that the proposed CNT-TFET that has a single junction exhibits better aforementioned figures of merit than the conventional p-i-n device. In addition, the p-n CNT-TFET shows higher current ratio and steeper subthreshold swing than those provided by the conventional design with the gate length downscaling. The obtained results make the proposed nanoscale TFET as a promising device for the future nanoelectronics.