The application of a novel intermixing technique for multi-bandgap integration of InGaAs/AlInGaAs

Here, for the first time, we report the application of this novel technique to a dual wavelength ridge waveguide laser array and an integrated 2x2 cross point optical switch in InGaAs-AlInGaAs material. In the fabrication, a cap layer of 200 nm of PECVD SiO/sub 2/ was deposited onto InGaAs-AlInGaAs multi-quantum-well samples.