Structural and loss characterization of SiON layers for optical waveguide applications

Silicon oxynitride films for optical waveguide applications were grown at 350/spl deg/C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region, Annealing of the films was performed together with close monitoring of the N-H bond at 3400 cm/sup -1/ and correlated with optical loss measurements. The possibility of a new method for the reduction of the N-H bonds without annealing is discussed.