Tunnel Field Effect Transistor for Ultra Low Power Applications: A Review

Tunnel Field Effect Transistor (TFET) has emerged as a promising candidate for applications in low power VLSI/ULSI circuit design. TFETs have shown better performance in terms of short-channel effects and random dopant fluctuation etc as compared to the MOSFET. TFETs are based upon the concept of gated p-i-n diode and band to band tunneling phenomenon. This paper presents a comprehensive overview of TFETs and its performance variation with different parameters. The work also demonstrates the different advancements in TFETs to make it more reliable and cost effective in terms of lower subthreshold swing, higher on-current, lower leakage current, lower DIBL effect and ambipolar current etc. Finally, a comparison between different kinds of advanced TFETs as- doped/ undoped, symmetrical/ asymmetrical and single/double gate TFETs is presented in this work.