Performance Enhancement of Multigate FinFETs by Using High-k Stack Oxide

FinFET has become extremely popular in recent times by virtue of its ability to suppress short channel effects (SCEs) in nanometer regime. In this work, we study and compare the electrical characteristics of multigate FinFETs (triple gate, Pi gate, Omega gate and Gate-All-Around (GAA)) and the effect of high-k dielectric oxide stack on the performance of multigate FinFETs. It is found that employing high-k dielectric gate stack reduces short channel effects (SCEs), subthreshold slope, leakage current and alleviates switching characteristics. Also, the superior ability of GAA FinFET to overcome SCEs is also noticed.