Effects of Wave Function Penetration on Gate Capacitance and Threshold Voltage of p-Channel Double Gate Junction Less Field Effect Transistor

Wave function penetration phenomenon had been studied for a p-channel Double Gate Junction Less Field Effect Transistor in terms of Capacitance-Voltage (C-V) characteristics. It has been found that the gate capacitance differs visibly for the two cases (i.e. with and without penetration) in device's accumulation mode only. As a result, it is safe to assume that the threshold voltage is not dependent on wave function penetration for this device; which had been established by extracting data from the simulated C-V curves.