Hydrogenation of trap layer as an SOI process step

A process for creating a hydrogen rich buried layer to be further used as a part of SOI wafer fabrication is presented. We form a trap layer and then fill it with hydrogen. A buried amorphized layer is used as the trap. The amorphization is performed with silicon self-implantation at low temperature. Electrolytic charging is used as the hydrogen filling technique. The layers obtained contain enough hydrogen to cause blistering of the silicon wafer surface.