Effects of Process-Voltage-Temperature (PVT) Variations on Low-Side MOSFET circuit Conducted Emission

In electronic circuits, signal switching creates significant harmonic content in the frequency domain. Designers are used to study this content through simulation and measurement to avoid Electromagnetic Compatibility (EMC) issues by minimising the conducted emissions (CE). However, variations of device parameters, such as Process/Voltage/Temperature (PVT) can result in variations of overall circuit parameters. Consequently, waveforms of electrical signals are modified, and so their spectral content. This paper presents a study of the effects of PVT on the conducted emission of a low-side MOSFET circuit. Measurements are presented, and explanations of the observed effects are given.