Analytical Modeling of the p-Type BESOI MOSFET at Linear Region Operation Leonard

The ^BESOI MOSFET is a reconfigurable transistor, i.e., it can work as an n-type or a p-type device due to its back enhanced operating principle. The back gate is used to induce carriers at the back interface (silicon film/buried oxide) to the low doped channel. This work aims to propose a first order model for the drain current at linear region of the p-type ^BESOI MOSFET based on the back and front silicon film/SiO₂ interfaces conduction. The analytical expression takes into account the series resistance, that plays an important role in the ^BESOI MOSFET due to the low doped channel and the drain and source Schottky contacts. The comparison between simulated and modeled data showed a very good agreement for a first order modeling.