Impact of blanking time on switching losses in a SiC MOSFET-based converter using capacitive snubbers

Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. In converters using SiC MOSFETs and capacitive snubbers, the blanking times may have a significant impact on switching losses. The power losses induced by unnecessary long blanking times have been quantified experimentally. It was found that, at 100 kHz, an adaptive blanking time can reduce the losses by more than 20 %. As those losses are directly proportional to the switching frequency, an adaptive blanking time is essential when designing for high operation frequencies. Doing so, higher operation frequencies are possible while maintaining a high efficiency.