650 V SiC Trench MOSFET for high-efficiency power supplies

This work introduces a new SiC Trench MOSFET technology with 650 V nominal blocking voltage. The technology is tailored to address the needs of power supplies in the power range from several hundred watts to some tens of kilowatts including server and telecom switch-mode power supply (SMPS), solar inverters and electric-vehicle charging. These applications benefit strongly from power semiconductors that serve high switching frequencies, enable fast switching under hard-switching conditions, and provide low conduction losses as well as a small output and reverse-recovery charge. The MOSFET technology introduced enables new, highly efficient topologies such as the full-bridge totem-pole in the power-factor correction (PFC) stage. The paper further presents long-term reliability data and performance evaluations indicating a possible absolute PFC stage efficiency of 99%. Such an efficiency is essential to gain an overall system efficiency of 98%.