Electrical Resistivity of Pressureless Sintered Silicon Nitride with A12O3-Y2O3

In this article we have shown that the material obtained by sintering without pressure with addition of oxides of yttrium and aluminum has excellent electrophysical properties. In particular, the electrical resistivity of pressureless sintered at 1650° C silicon nitride with Al₂O₃-Y₂O₃was equal to 3.6-10⁹. The mechanisms of conductivity of the described material were discussed and described. The high-temperature dependence of the electrical resistivity is also presented and described. Based on the obtained results, reported ceramics has a good combination of properties and is of practical interest.