A Simple SiC MOSFETs Three Level Inverter Topology for High Performance Shunt Active Power Filter

A highly efficient three level (3L) topology based entirely in silicon carbide (SiC) semiconductors for a shunt active power filter is proposed and presented. Furthermore, the efficiency of the proposed topology is compared with the efficiency achieved by other full SiC based conventional topologies: two level (2L), three level T-type (3L-TNPC) and three level neutral-point clamped (3L-NPC). The proposed topology has an efficiency superior to conventional all SiC 2L and 3L topologies for switching frequencies above 70 kHz. Further, for high current ratings, the proposed topology has the advantage that can be built just by cascading two 2L SiC modules.