Filter Design for AFE Rectifier using SiC MOSFET

The new generation wide bandgap semiconductor power devices such as silicon carbide MOSFET, which can have much higher switching frequency, have been applied in active frond end rectifiers in recent years. A higher switching frequency may enable a much smaller filter for the the active frond end rectifier. In this paper, the filter design method for active frond end rectifier with high switching frequency up to 40 kHz is studied. A new filter design procedure is presented, and the converter side inductor optimization with different core materials is investigated. For different switching frequencies, different core materials are selected with the optimized cost. Electromagnetic and thermal finite element analysis are carried out and seven inductor prototypes are designed. A 10 horsepower active frond end system based on silicon carbide MOSFET is built and the optimal designs are evaluated through experimental tests.