Advancement of a Highly Efficient Class-F power Amplifier for 5G Doherty Architectures

This paper presents a saturated Doherty power amplifier based on Class-F topology using unmatched GaN HEMT transistors for its high efficiency, high gain, and wide bandwidth capabilities. The Design topology of high efficiency switch-mode Class-F by controlling second and third harmonics and its linearity performance are studied, which ensures an improvement in Doherty operation at 3.6 GHz frequency band for 5G applications. The simulation results prove that the realized DPA achieves a peak power added efficiency of 55% at 43.58dBm output power, which improved by 10% in contrast to the conventional class AB/C Doherty.