A 28–60 GHz SiGe HBT LNA with 2.4-3.4 dB Noise Figure

This paper presents a 28-60 GHz multi-band low-noise amplifier (LNA) suitable for Ka-, Q- and V-band applications, which is realized in 0.13-μm SiGe BiCMOS technology. The proposed LNA achieves its multi-band performance by employing a T-type matching topology as interstage matching network (IMN). The LNA has a measured gain of 14.5 dB and 14.1 dB, and simulated noise figure (NF) of 2.4 dB and 3.4 dB at 28 and 60 GHz with a mean NF of 2.9 dB. The input return loss is less than -10 dB from 22-67 GHz. The chip occupies an area of 0.15 mm
²
and consumes 27 mW from a 2.5 V power supply. To the authors' knowledge the realized LNA is superior than any state-of-the-art LNAs in similar silicon technologies.