D-Band Silica-Based Package Substrate With EBG Structure for Flip-Chip Modules

This paper presents a silica-based package substrate for flip-chip modules in D-band. An electromagnetic band-gap (EBG) structure is adopted in the substrate in order to suppress degradation of flipped IC performance due to parasitic propagation modes. By introducing a trench in the EBG structure, the structure can work in higher frequencies without thinning the substrate. A 150-GHz-band up-converter IC is mounted on the substrate by flip-chip bonding. No degradation is observed in RF performance compared with the unflipped one.