A 20.7% PAE 3-Stage 60GHz Power Amplifier for Radar Applications in 28nm Bulk CMOS

This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for short range radar applications, realized in a 28 nm bulk CMOS technology. Measurement results show a saturated output power (P
_sat
) of 11.9 dBm with a 20.7 % power-added efficiency (PAE) at 60 GHz. Moreover, the measurements show that for a frequency range from 57 GHz to 64 GHz, the P
_sat
varies from 10.5 dBm to 11.2 dBm and the circuit draws 26 mA from a 0.9V power supply. Furthermore, the fabricated chip has an area of 0.61mm × 0.31 mm including the pads.