Design and Analysis of 2.4 GHz GaN HEMT Class E Switching RF Power Amplifier

RF power amplifier based on the FET gate switching has been designed and simulated at 2.4GHz operation for IoT application. The switching RF power amplifier for transmitter using a GaN HEMT transistor switched by 2.4 GHz pulse and supposed to work as a class-E RF amplifier where a capacitor shunted between drain and grounded source of the FET worked half-periodically building load voltage based on capacitor voltage build-up and current discharging, respectively. The simulation has been using Keysight ADS Harmonic Balance simulator. The input pulse source voltage has been varied by 1V increment from 2V to 5V at -3.2V gate voltage bias. The load continuous output power, PAE and gain have been observed at those pulse gate switching voltage. Pulsed switching at 4V-peak and 25 dBm 2.4GHz pulse source has resulted 43 dBm continuous RF signal power at the output or equivalent to 22W power with 18dB gain and PAE of 64.7%.